• DocumentCode
    1635239
  • Title

    On the bipolar and unipolar resistive switching characteristics in Ag/SiO2/Pt memory cells

  • Author

    Liu, Lifeng ; Gao, Bin ; Chen, Bing ; Chen, Yuansha ; Wang, Yi ; Kang, Jinfeng ; Han, Ruqi

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2010
  • Firstpage
    1157
  • Lastpage
    1159
  • Abstract
    Resistive switching characteristics of Ag/SiO2/Pt memory cells with different set current compliance are studied. Ag/SiO2/Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage (<;0.5V), low operation current (~1μA), high resistance ratio (104) and good retention characteristic. Co-existence of bipolar and unipolar resistance switching is observed in Ag/SiO2/Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO2/Pt cells are discussed.
  • Keywords
    random-access storage; Ag-SiO2-Pt; bipolar resistive switching characteristics; memory cell; resistive random access memory; set current compliance; unipolar resistive switching characteristics; Electrodes; Films; Optical switches; Resistance; Silicon; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667586
  • Filename
    5667586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1635239