Title :
On the bipolar and unipolar resistive switching characteristics in Ag/SiO2/Pt memory cells
Author :
Liu, Lifeng ; Gao, Bin ; Chen, Bing ; Chen, Yuansha ; Wang, Yi ; Kang, Jinfeng ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Resistive switching characteristics of Ag/SiO2/Pt memory cells with different set current compliance are studied. Ag/SiO2/Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage (<;0.5V), low operation current (~1μA), high resistance ratio (104) and good retention characteristic. Co-existence of bipolar and unipolar resistance switching is observed in Ag/SiO2/Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO2/Pt cells are discussed.
Keywords :
random-access storage; Ag-SiO2-Pt; bipolar resistive switching characteristics; memory cell; resistive random access memory; set current compliance; unipolar resistive switching characteristics; Electrodes; Films; Optical switches; Resistance; Silicon; Solids;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667586
