Title :
Thermally stable TaOx-based resistive memory with TiN electrode for MLC application
Author :
Zhang, Lijie ; Huang, Ru ; Gao, Dejin ; Pan, Yue ; Qin, Shiqiang ; Yu, Zhe ; Shi, Congyin ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this paper, a high thermal stable TaOx-based RRAM device has been fabricated with TiN as the top electrode. The fabricated device shows good endurance behavior with little fluctuations in voltages and resistance state. Due to the stability of this device, potential for MLC application was also investigated. In addition, the mechanism of the high performance of the device is analyzed with Gibbs free energy based on the TEM-analysis and comparative experiments.
Keywords :
ceramic capacitors; electrodes; random-access storage; thermal stability; Gibbs free energy; MLC application; RRAM device; TEM-analysis; TiN; TiN electrode; thermally stable TaOx-based resistive memory; Copper; Electrodes; Performance evaluation; Resistance; Switches; Thermal stability; Tin;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667587
