Title :
InGaAs and Ge MOSFETs with a common high κ gate dielectric
Author :
Lee, W.C. ; Lin, T.D. ; Chu, L.K. ; Chang, P. ; Chang, Y.C. ; Chu, R.L. ; Chiu, H.C. ; Lin, C.A. ; Chang, W.H. ; Chiang, T.H. ; Lee, Y.J. ; Hong, M. ; Kwo, J.
Abstract :
Ultra-high-vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] has been employed for passivating InGaAs and Ge, without using any interfacial paissivation layers (IPLs). The GGO/InGaAs and /Ge metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited low capacitance-equivalent-thickness (CET) of less than 1nm in GGO, low interfacial densities of states (Dit´s) ~ 1011eV-1cm-2, and thermal stability at high temperatures. The high-quality GGO and interfaces of GGO/InGaAs, and /Ge enable the fabrications of inversion-channel InGaAs and Ge MOS field-effect-transistors (MOSFETs) using a self-aligned process, leading to high drain currents, transconductances (Gm), and carrier mobilities.
Keywords :
MOSFET; gadolinium compounds; gallium arsenide; gallium compounds; high-k dielectric thin films; indium compounds; thermal stability; Ga2O3(Gd2O3)-Ge; Ga2O3(Gd2O3)-InGaAs; MOS field-effect-transistors; MOSFET; carrier mobilities; common high κ gate dielectric; high drain currents; inversion-channel field-effect-transistors; low capacitance-equivalent-thickness; metal-oxide-semiconductor capacitors; self-aligned process; thermal stability; ultra-high-vacuum deposition; Indium gallium arsenide; Logic gates; MOSFET circuits; MOSFETs; Performance evaluation; Thermal stability;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667596
