Single-electron transistors fabricated by electroless plated nanogap electrodes and chemisorbed Au nanoparticles

Coulomb diamonds were clearly observed on single-electron transistors (SETs) fabricated by bottom-up processes of electroless plating of Au nanogap electrodes and chemisorption of a Au nanoparticle at 80 K. In the drain current-drain voltage characteristics, Coulomb staircases were modulated by the side gate voltage. Tunneling resistances and source/drain/gate capacitances of the SET were evaluated by fitting the theoretical Coulomb staircase based on the full orthodox theory in a double-barrier tunneling junction to the experimental results of Coulomb blockade under the application of side gate voltages.