Title :
Low temperature junction formation by solid phase epitaxy on thin film devices: Atomistic modeling and experimental achievements
Author :
Sklenard, B. ; Batude, P. ; Pasini, L. ; Fenouillet-Beranger, C. ; Previtali, B. ; Casse, M. ; Brunet, L. ; Rivallin, P. ; Barbe, J.-C. ; Tavernier, C. ; Cristoloveanu, S. ; Vinet, M. ; Martin-Bragado, I.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
In this paper, we address the problem of junction formation with a low temperature processing (≤ 600°C) through Solid Phase Epitaxial Regrowth. We present the main experimental achievements and suggest solutions to optimize the junctions. In particular, atomistic simulations based on kinetic Monte Carlo (kMC) method allow getting insight into the complex physical phenomena that take place during junction formation.
Keywords :
Monte Carlo methods; low-temperature techniques; optimisation; semiconductor junctions; silicon-on-insulator; solid phase epitaxial growth; thin film devices; atomistic modeling; atomistic simulations; experimental achievements; kMC method; kinetic Monte Carlo method; low temperature junction formation; low temperature processing; solid phase epitaxial regrowth; thin film devices; Annealing; Junctions; Kinetic theory; Resistance; Silicon; Solids; Stress;
Conference_Titel :
Junction Technology (IWJT), 2014 International Workshop on
Conference_Location :
Shanghai
DOI :
10.1109/IWJT.2014.6842024
