DocumentCode :
1635589
Title :
Scaled silicon nanoelectromechanical (NEM) hybrid systems
Author :
Mizuta, Hiroshi ; Garcia-Ramirez, Mario A. ; Hassani, Faezeh A. ; Ghiass, Mohammad A. ; Kalhor, Nima ; Moktadir, Zakaria ; Tsuchiya, Yoshishige ; Sawai, Shunichiro ; Ogi, Jun ; Oda, Shunri
Author_Institution :
NANO Group, Univ. of Southampton, Southampton, UK
fYear :
2010
Firstpage :
1198
Lastpage :
1201
Abstract :
In this paper we overview recent attempts at co-integrating silicon nano-electro-mechanical systems (NEMS) with nanoelectronic devices aiming to add more functionalities to conventional electronic devices in `More-than-Moore´ domain and also explore novel operating principles in `Beyond CMOS´ domain.
Keywords :
CMOS integrated circuits; elemental semiconductors; nanoelectromechanical devices; nanoelectronics; silicon; CMOS domain; NEM hybrid system; more-than-Moore domain; nanoelectronic device; scaled silicon nanoelectromechanical system; silicon NEMS; Atomic layer deposition; CMOS integrated circuits; Logic gates; Nanoelectromechanical systems; Nanoscale devices; Phonons; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667601
Filename :
5667601
Link To Document :
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