Title :
Graphene transistors — A new contender for future electronics
Author_Institution :
Inst. fur Mikro- und Nanoelektronik, Tech. Univ. Ilmenau, Ilmenau, Germany
Abstract :
During the last few years, graphene has gained remarkable attention in the device community. Graphene transistors are evolving at a rapid pace and graphene-based devices are considered as an option for a post-Si electronics. To assess whether graphene can meet the high expectations or not, the properties and specifics of this new material have to be analyzed carefully. The present paper provides an overview of the current status of graphene transistor development and reviews the prospects and problems of these devices.
Keywords :
graphene; transistors; graphene transistor development; graphene-based devices; post silicon electronics; Logic gates; MOSFETs; Photonic band gap; Radio frequency; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667602
