Physical basis for high power semiconductor nanosecond opening switches

The authors describe how, as a result of long-time research and development, a very high power, repetitive mode, semiconductor-based nanosecond technique is now commercially available. Drift step recovery diodes and inverse recover diodes are preferable as a base for generators with pulse rise times of 0.5-3 ns and pulse powers less than 50-80 MW. Silicon opening switch diodes are preferable at pulse rise times higher than 5 ns with any power and at any pulse rise time if the pulse power is higher than 100 MW.