Title :
Characteristics and modeling of Si-nanowire FETs
Author :
Jeong, Yoon-Ha ; Baek, Rock-Hyun ; Lee, Sang-Hyun ; Baek, Chang-Ki ; Kim, Dae M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
In this paper, the C-V and I-V characteristics of Si-nanowire FET are presented. From the C-V data, the effects of undoped floating channel on the Si-nanowire FET are analyzed. Also, the intrinsic channel capacitance and mobility therein are extracted accurately by eliminating the effect of parasitic capacitances. Moreover, the I-V data free from the effect of the series resistance are obtained and fitted with compact model. Finally, the volume trap density Nt is characterized and discussed in correlation with differing oxide processes and the 1/f noise as the critical reliability issue in Si-NWFET.
Keywords :
field effect transistors; nanowires; silicon; C-V characteristics; FET; I-V characteristics; critical reliability; nanowire; Capacitance; Data models; Degradation; Logic gates; MOSFETs; Noise;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667604
