Title :
An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application
Author :
Tosaka, H. ; Fujii, T. ; Miyakoshi, K. ; Ikenaka, K. ; Takahashi, M.
Author_Institution :
Microwave & Optelectronic Device Div., New Japan Radio Co., Ltd, Saitama, Japan
Abstract :
A monolithic antenna switch IC using enhancement and depletion (E/D) - mode AlGaAs/InGaAs pseudomorphic high electron mobility transistors (p-HEMTs) has been developed for GSM/DCS/PCS/WCDMA band digital mobile communication systems. This antenna switch MMIC achieves a low insertion loss and small chip size using a single pole double throw (SPDT) switch for GSM and single pole 4 throw (SP4T) switch for other band configurations, as well as internal logic circuits with an E/D mode p-HEMTs process. This MMIC achieves an insertion loss of 0.21dB at 915MHz and 0.53dB at 1785MHz. The isolation to the RX ports is more than 30 dB, and the input power at 0.1 dB compression is over 36 dBm at +2.7 V operation.
Keywords :
HEMT integrated circuits; III-V semiconductors; UHF integrated circuits; aluminium compounds; antenna accessories; cellular radio; code division multiple access; digital radio; field effect MMIC; gallium arsenide; indium compounds; losses; microwave switches; personal communication networks; 0.21 dB; 0.53 dB; 1785 MHz; 2.7 V; 915 MHz; AlGaAs-InGaAs; AlGaAs/InGaAs; DCS; E/D mode p-HEMT; GSM; PCS; SPDT switch; WCDMA; antenna switch MMIC; chip size; input power; insertion loss; internal logic circuits; isolation; Communication switching; Distributed control; GSM; Insertion loss; MMICs; Mobile antennas; Multiaccess communication; Personal communication networks; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211020
