Rotational implant menitoring recipe characterization

For advance CMOS device manufacturing, HALO implant with high tilt angles (30-45°) and 4-rotational condition has become one of the critical implant steps defining device properties. However, from Ion Implanter tool hardware point of view, the rotation mechanism function is not able to be monitored or verified to be accurate. A failure to rotate will not generate any tool error on traditional implanter design while typical Ion Implant dose monitoring by sheet resistance (Rs) on bare wafer is not sensitive to detect failure due to no device structure existence. In this paper we illustrates process control with new Ion Implantation method that been developed by using bare silicon wafer which is capable to provide in-line detection of rotation failure induced by hardware failure.