Device Characteristics of TSV-Based Piezoelectric Resonator With Load Capacitance and Static Capacitance Modification

Author

Jian-Yu Shih ; Yen-Chi Chen ; Chih-Hung Chiu ; Chung-Lun Lo ; Chi-Chung Chang ; Kuan-Neng Chen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

62

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

927

Lastpage

933

Abstract

The piezoelectric resonator device based on 3-D integration technologies and hermetic sealing bonding is presented with conventional semiconductor process. To pursue small form factor, high-performance, and cost-effective technologies, this through-silicon via (TSV)-based resonator is fabricated by CuSn eutectic bonding for hermeticity, wafer-level thinning, and Cu TSVs interconnection, while high-temperature cofired ceramic (HTCC) with metal lid is applied in the conventional resonator devices. The device characteristics and reliability of TSV-based resonator reveal it has great performance and outstanding quality. In addition, the device characteristics with load capacitance and its improvement through modification of the isolation in TSV-based substrate are discussed in this research. Demonstrations of these characteristics show that the TSV-based resonator possesses advantages and compatibility with current semiconductor process, as well as the manufacturability compared with the conventional metal lid with HTCC enclosures.

Keywords

ceramic packaging; crystal resonators; hermetic seals; integrated circuit bonding; integrated circuit interconnections; three-dimensional integrated circuits; wafer level packaging; 3D integration technology; HTCC; TSV interconnection; TSV-based piezoelectric resonator device; eutectic bonding; hermetic sealing bonding; high-temperature cofired ceramic; load capacitance; manufacturability; semiconductor process; static capacitance modification; through-silicon via; wafer-level thinning; Bonding; Capacitance; Frequency measurement; Performance evaluation; Resonant frequency; Substrates; Tin; 3-D integration; piezoelectric resonator device; through-silicon via (TSV); through-silicon via (TSV).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2387231

Filename

7008505