Title :
Design techniques to combat process, temperature and supply variations in Bluetooth RFIC
Author :
Tee, Y.T. ; Seng, Y.H. ; Boon, L.P. ; Hung, T.K. ; Tachi, S. ; Ling, K.S. ; Murakami, T. ; Hui, S.J. ; Tiong, L.C. ; Choon, T.L. ; Kheng, W.W. ; Jun, X.Q. ; Meng, L.C. ; Hwi, L.S. ; Wei, X. ; Toh, A.
Author_Institution :
RFIC Dev. & Design Dept., OKI Techno Centre (Singapore) Pte Ltd, Singapore, Singapore
Abstract :
A fully integrated Bluetooth RF transceiver with sensitivity up to -85 dBm with /spl plusmn/2 dB process variation has been achieved. The sensitivity only varies /spl plusmn/1 dB from 2.7 to 3.3V and /spl plusmn/1.5 dB from -40 to +90/spl deg/C. This RFIC is fabricated using a 0.35/spl mu/m CMOS process and can withstand a maximum input power of +5 dBm for 0.1% BER.
Keywords :
Bluetooth; CMOS integrated circuits; integrated circuit design; radiofrequency integrated circuits; transceivers; -40 to 90 degC; 0.35 micron; 2.7 to 3.3 V; BER; Bluetooth RFIC; CMOS process; RF transceiver; design technique; input power; process variation; sensitivity; supply variation; temperature variation; Band pass filters; Bluetooth; CMOS process; Radio frequency; Radiofrequency integrated circuits; Signal processing; Switches; Temperature sensors; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211028
