Title :
Formation and electrical properties of metal/Ge1−xSnx contacts
Author :
Nakatsuka, Osamu ; Nishimura, T. ; Suzuki, A. ; Kato, Kazuhiko ; Yunsheng, Deng ; Kurosawa, Masashi ; Takeuchi, Wataru ; Sakashita, Mitsuo ; Taoka, Noriyuki ; Zaima, Shigeaki
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
We have investigated the crystalline structure of Ni germanostanane/Ge1-x Snx contacts. Uniform Ni(Ge1-xSnx) layers on Ge1-xSnx can be formed with solid phase reaction by annealing Ni/G1-xSnx/Ge samples at 350°C. However, severe agglomeration and Sn precipitation from Ni(Ge1-xSnx) layers are observed after annealing at above 450 °C. We have also investigated the electrical properties of an Sn/n-Ge Schottky contact prepared at room temperature. Sn electrode exhibits the possibility of the alleviation of Fermi level pining phenomena for metal/n-Ge contacts.
Keywords :
Schottky barriers; annealing; crystal structure; electric properties; germanium compounds; nickel; Fermi level pining phenomena; Ni-Ge1-xSnx; Schottky contact; crystalline structure; electrical properties; germanostanane; solid phase reaction; temperature 293 K to 298 K; temperature 350 degC; tin electrode; tin precipitation; Annealing; Contacts; Gold; Nickel; Temperature measurement; Tin;
Conference_Titel :
Junction Technology (IWJT), 2014 International Workshop on
Conference_Location :
Shanghai
DOI :
10.1109/IWJT.2014.6842039
