Title :
Dopant deactivation and reactivation study of advanced doping technologies
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
Abstract :
Electrical-assisted diffusion of carriers had been proposed as a new hypothesis of a major dopant deactivation kinetics. New metrology methods, including SIMS/ARXPS and CAOT/DHE methods, are used for this study and supply supporting evidences and data. N-type (P- and As-based) implants show more serious deactivation, but similar reactivation to P-type (B-based) implants, which can be interpreted by the electrical-assisted diffusion mechanism. In this paper, dopant deactivation and reactivation of advanced doping techniques including both n-type doping by As beam-line (BL) implant and p-type doping by molecular BF2 BL implant and B2H6 plasma doping (PLAD) are studied and demonstrated.
Keywords :
Hall effect; X-ray photoelectron spectra; anodisation; arsenic; carrier lifetime; elemental semiconductors; ion implantation; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; surface diffusion; As beam-line implant; B-based implants; B2H6 plasma doping; CAOT-DHE methods; N-type As-based implants; N-type P-based implants; SIMS-ARXPS methods; Si:As; Si:P; X-ray photoelectron spectra; advanced doping techniques; advanced doping technologies; continuous anodic oxidation technique-differential Hall effect; dopant deactivation kinetics; dopant reactivation; electrical-assisted carrier diffusion; electrical-assisted diffusion mechanism; molecular BF2 BL implant; p-type doping; secondary ion mass spectra; Annealing; Doping; Implants; Impurities; Loss measurement; Silicon; Substrates;
Conference_Titel :
Junction Technology (IWJT), 2014 International Workshop on
Conference_Location :
Shanghai
DOI :
10.1109/IWJT.2014.6842044
