Title :
A high voltage pulser R&D for plasma immersion ion implantation applications
Author :
Spassov, V. ; Gueorguiev, L. ; Barroso, J. ; Ueda, Makoto
Author_Institution :
Dept. R&D, Comput.. Network Commun. Inc., Crown Point, IN, USA
Abstract :
Summary form only given. Plasma Immersion Ion Implantation (PIII) is a technology used to modify the material surface properties of a variety of products, e.g. for the manufacturing of semiconductor junctions and oxides, and for the production of high-strength, light-weight corrosion-resistant aerospace components. PIII applies a series of negative high-voltage pulses to a sample (target) immersed in plasma. High-Voltage Pulse Generator was built in a circuit category of Pulse Forming Network (PFN), consisting of 10 LC sections with L=100 /spl mu/H, C=2.5 nF and metglas core high-voltage pulse transformer. The instrument was designed to produce an adjustable, several amperes, flat 100 kV pulse with 10 /spl mu/s duration and pulse repetition frequency (PRF) from 50 Hz to 7 kHz. The generator is fed with sine wave, constant high current source, and 20 kV, 3 A switching power supply.
Keywords :
ion implantation; plasma applications; pulse generators; LC sections; circuit category; high voltage pulser; high-strength light-weight corrosion-resistant aerospace components; linear current-time output dependence; material surface properties; metglas core high-voltage pulse transformer; negative high-voltage pulses; nonlinear switching components; oxides; plasma immersion ion implantation applications; pulse duration; pulse forming network; pulse generator; pulse repetition frequency; semiconductor junctions; sine wave constant high current source; switching power supply; target; Aerospace materials; Plasma immersion ion implantation; Plasma properties; Production; Pulse circuits; Pulse transformers; Pulsed power supplies; Semiconductor device manufacture; Semiconductor materials; Voltage;
Conference_Titel :
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location :
Raleigh, NC, USA
Print_ISBN :
0-7803-4792-7
DOI :
10.1109/PLASMA.1998.677733