Heated ion implantation technology for FinFET application

Enhancement of transistor drivability with suppressing short channel effect is a mandatory requirement for device scaling. In order to address the requirement, transistor structure transition from 2D bulk planar to SOI or 3D FinFET structures is now proceeding [1-4]. In FinFET structures, high dose tilt implantations are used in source drain extension formation. This implantations cause amorphization of Si fins, and there exists an issue here for difficulty in regrowth of amorphized Si fins during successive activation annealing. For further scaling, fin width becomes narrower, and regrowth from remained bottom crystal seed become difficult. Amorphized Si fin cannot be easily regrown to Si fin top during activation annealing, and regrowth from crystal channel regions makes zip-like defects in the fin, resulting in twin formation and/or poly crystals [5-6] as shown in the schematic figure (Fig.1). This issue is particularly severe for SOI FinFETs.