The EL properties of well-aligned n-ZnO nanorods / p-GaN structure

Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I-V characteristic results show that the nanosized junction can increase the carrier injection efficiency of the n-ZnO nanorods/p-GaN LED device.