Title :
Numerical and experimental study of localized lifetime control LIGBT by low energy He ions implantation
Author :
Fang, Jian ; Tang, Xinwei ; Li, Zhaoji ; Bo, Zhang
Author_Institution :
Sch. of Micro-Electron. & Solid-state Electron., Univ. of Electron. Sci. & Technol., Chengdu, China
Abstract :
A high speed LIGBT (lateral insulated gate bipolar transistor) with localized lifetime control by using high dose and low energy helium implantation (LC-IGBT) is proposed. Compared with conventional LIGBTs, particle irradiation results show that the trade-off relationship between the turn-off time and forward voltage drops has been improved. At the same time, the forward voltage drops and turn-off time of such devices have been researched, in the case of the localized lifetime control region placed near the p+-n junction, even in the p+ anode. The results show, for the first time, that helium ions, which stop in the p+ anode, also contribute to increasing the forward voltage drops and reducing the turn-off time.
Keywords :
electric potential; helium ions; insulated gate bipolar transistors; ion implantation; semiconductor doping; semiconductor junctions; He; forward voltage drop; helium implantation; helium ion implantation; lateral IGBT; lateral insulated gate bipolar transistor; localized lifetime control LIGBT; particle irradiation results; turn-off time; Anodes; Charge carrier lifetime; Helium; Ion implantation; Logic circuits; Power engineering and energy; Power integrated circuits; Silicon; Solid state circuits; Voltage control;
Conference_Titel :
Communications, Circuits and Systems, 2004. ICCCAS 2004. 2004 International Conference on
Print_ISBN :
0-7803-8647-7
DOI :
10.1109/ICCCAS.2004.1346459
