DocumentCode :
1636124
Title :
Repetitive short pulse SOS-generators
Author :
Lyubutin, S.K. ; Mesyats, G.A. ; Rukin, S.N. ; Slovikovsky, B.G.
Author_Institution :
Inst. of Electrophys., Acad. of Sci., Ekaterinburg, Russia
Volume :
2
fYear :
1999
Firstpage :
1226
Abstract :
The recently detected effect of the subnanosecond interruption of high-density currents in SOS-diodes opens up fresh opportunities in generation of powerful high-voltage short pulses. The study of the SOS-diodes showed that the current interruption time decreased to 500-600 ps when the reverse pumping time was reduced to 10-15 ns. A subnanosecond SOS-diode, which cuts off a 1-kA current in 600 ps, served as the basis for development of a pulse generator that produces pulses having the amplitude of 150-250 kV, the half-height duration of 3 to 4 ns, and the repetition frequency up to 5 kHz in a 30-second burst. A more powerful generator produces pulses having the duration of 5 to 6 ns, the power of 400 to 500 MW, the voltage of up to 400 kV, and the repetition frequency up to 2 kHz in the burst mode. These generators do not contain gas-discharge switches. As a result, they combine a high repetition frequency and stability of pulses, boast of virtually unlimited (solid-state) service life, and offer a high specific average power. These properties are especially important for high-power short-pulse generators intended for commercial applications. Physical processes that take place in the semiconductor structure of the SOS-diodes operating for subnanosecond interruption of currents are discussed. The circuitry and design of the short-pulse generators are described. Results of the tests performed on the said generators are reported.
Keywords :
power semiconductor diodes; power semiconductor switches; pulse generators; pulsed power supplies; pulsed power switches; 1 kA; 10 to 15 ns; 150 to 250 kV; 2 kHz; 3 to 4 ns; 30 s; 400 kV; 400 to 500 MW; 5 kHz; 500 to 600 ps; 600 ps; SOS-diodes; current interruption time; gas-discharge switches; high-density current subnanosecond interruption; high-power short-pulse generators; repetition frequency; repetitive short pulse SOS-generators; reverse pumping time; semiconductor opening switches; semiconductor structure; service life; Character generation; Frequency; Plasma density; Plasma properties; Power generation; Power semiconductor switches; Pulse generation; Semiconductor diodes; Stability; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
Type :
conf
DOI :
10.1109/PPC.1999.823745
Filename :
823745
Link To Document :
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