Title :
Junction technology outlook for sub-28nm FDSOI CMOS
Author :
Hutin, Louis ; Rozeau, O. ; Carron, V. ; Hartmann, J.-M. ; Grenouillet, L. ; Borrel, Julien ; Nemouchi, F. ; Barraud, S. ; Le Royer, Cyrille ; Morand, Yves ; Plantier, Christophe ; Batude, P. ; Fenouillet-Beranger, C. ; Boutry, Herve ; Ernst, Thomas ; Vin
Author_Institution :
Leti, CEA, Grenoble, France
Abstract :
We review in this paper some key enabling process integration modules, the development of which will allow pursuing the trend of energy efficiency improvement in sub-28nm FDSOI technologies.
Keywords :
CMOS integrated circuits; epitaxial growth; integrated circuit design; ion implantation; silicon-on-insulator; FDSOI CMOS; energy efficiency improvement; fully depleted silicon-on-insulator; junction technology outlook; Conductivity; Doping; Epitaxial growth; Junctions; Logic gates; Metals; Silicon;
Conference_Titel :
Junction Technology (IWJT), 2014 International Workshop on
Conference_Location :
Shanghai
DOI :
10.1109/IWJT.2014.6842050
