• DocumentCode
    163614
  • Title

    Junction technology outlook for sub-28nm FDSOI CMOS

  • Author

    Hutin, Louis ; Rozeau, O. ; Carron, V. ; Hartmann, J.-M. ; Grenouillet, L. ; Borrel, Julien ; Nemouchi, F. ; Barraud, S. ; Le Royer, Cyrille ; Morand, Yves ; Plantier, Christophe ; Batude, P. ; Fenouillet-Beranger, C. ; Boutry, Herve ; Ernst, Thomas ; Vin

  • Author_Institution
    Leti, CEA, Grenoble, France
  • fYear
    2014
  • fDate
    18-20 May 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    We review in this paper some key enabling process integration modules, the development of which will allow pursuing the trend of energy efficiency improvement in sub-28nm FDSOI technologies.
  • Keywords
    CMOS integrated circuits; epitaxial growth; integrated circuit design; ion implantation; silicon-on-insulator; FDSOI CMOS; energy efficiency improvement; fully depleted silicon-on-insulator; junction technology outlook; Conductivity; Doping; Epitaxial growth; Junctions; Logic gates; Metals; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2014 International Workshop on
  • Conference_Location
    Shanghai
  • Type

    conf

  • DOI
    10.1109/IWJT.2014.6842050
  • Filename
    6842050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=163614