Title :
A flexible, highly-sensitive, and easily-fabricated carbon-nanotubes tactile sensor on polymer substrate
Author :
Ho, ChiaHua ; Su, Wang-Shen ; Hu, Chih-Fan ; Lin, Chia-Min ; Fang, Weileun ; Yang, Fu-Liang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
A flexible, highly-sensitive, and easily fabricated carbon nanotubes (CNTs) tactile sensor is reported in this paper. CNTs are grown and patterned on bulk-micromachined silicon substrate with 3-dimensional surface profile. After polymer molding, the CNTs with 3-dimensional distribution are successfully transferred onto a flexible PDMS with 3-dimensional tactile-bump. Advantages of presented tactile sensor are (1) exactly determine loading force by resistance change due to almost linearly current-voltage (I-V) characteristics, (2) embedded patterned CNTs into polymer using simple silicon-substrate molding process, (3) 3-dimensional distributed CNTs enable the detection of shear and normal forces, and (4) 3-dimensional polymer structure by molding as a tactile-bump. One of anisotropic-type patterned CNT approach behaves good sensing sensitivity of both normal (23%/N) and shear (18%/N) forces loading. With proper CNTs designs, tactile sensor has normal and shear forces sensitivities of up to 23%/N and 95%/N, respectively.
Keywords :
carbon nanotubes; electric resistance; micromachining; moulding; polymer structure; silicon; tactile sensors; 3D distribution; 3D polymer structure; 3D surface profile; 3D tactile-bump; I-V characteristics; Si; anisotropic-type patterned CNT; bulk-micromachined silicon substrate; carbon nanotube; current-voltage characteristics; flexible PDMS; loading force; polymer molding; polymer substrate; resistance change; sensing sensitivity; shear detection; silicon-substrate molding process; tactile sensor; Force; Loading; Polymers; Sensitivity; Silicon; Substrates; Tactile sensors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667624