Title :
Short-range interaction affecting transport properties of two-dimensional electron Gas with nearby embedded self-assembled GaSb/GaAs type-II quantum dots
Author :
Li, Guodong ; Yin, Hong ; Jiang, Chao
Author_Institution :
Nat. Center for Nanosci. & Technol., Beijing, China
Abstract :
We report on study of the scattering mechanisms in the system of AlGaAs/GaAs two-dimensional electron gas (2DEG) with nearby embedded GaSb/GaAs type-II quantum dots (QDs), which directly affect its transport properties. Mobilities were measured as functions of electron density N2D in the QDs contained sample and reference sample at 4.2K, respectively. In the framework of Born approximation, a short-range scattering model of GaSb QDs considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data.
Keywords :
III-V semiconductors; aluminium compounds; approximation theory; electro-optical devices; electron gas; gallium arsenide; quantum dots; Born approximation; GaSb-GaAs; quantum dots; rectangular-shaped potential; scattering mechanisms; transport properties; two-dimensional electron gas; Approximation methods; Electric potential; Gallium arsenide; Quantum dot lasers; Quantum dots; Scattering; Shape;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667625
