Title :
The performance comparison of CMOS vs bipolar VCO in SiGe BiCMOS technology
Author :
Wang, D. ; Xudong Wang
Author_Institution :
Boston Design Center, TriQuint Semicond., Lowell, MA, USA
Abstract :
Two 2.3 GHz VCO monolithic ICs using CMOS and bipolar topology, respectively, for WCDMA transmitter applications, are designed and fabricated in IBM 0.25 /spl mu/m SiGe BiCMOS technology. The design trade-offs of each design topology are discussed. The results indicated that the CMOS version has better phase noise, is more power efficient, but is more sensitive to temperature and process than that of its bipolar counterpart.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF oscillators; code division multiple access; integrated circuit design; integrated circuit measurement; integrated circuit noise; phase noise; radio transmitters; semiconductor materials; voltage-controlled oscillators; 0.25 micron; 2.3 GHz; CMOS/bipolar VCO performance comparison; SiGe; SiGe BiCMOS technology; UHF voltage controlled oscillators; WCDMA transmitter monolithic IC; design topology trade-offs; phase noise; power efficiency; temperature/process sensitivity; BiCMOS integrated circuits; CMOS process; CMOS technology; Germanium silicon alloys; Multiaccess communication; Phase noise; Silicon germanium; Topology; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211044
