• DocumentCode
    1636346
  • Title

    Current analysis of dual quantum dot transistor based on Schrödinger equation

  • Author

    Fujihashi, Chugo

  • Author_Institution
    Dept. of Appl. Comput. Sci., Tokyo Polytech. Univ., Atsugi, Japan
  • fYear
    2010
  • Firstpage
    1262
  • Lastpage
    1264
  • Abstract
    The specific property of the dual quantum dot transistor is that the current is strongly controlled by resonance tunneling between two quantum states in both dots. The property is analyzed clearly by the method based on Schrödinger equation for an electron in the dot and stochastic theory.
  • Keywords
    Schrodinger equation; resonant tunnelling; semiconductor quantum dots; stochastic processes; transistors; Schrodinger equation; dual quantum dot transistor; resonance tunneling; stochastic theory; Energy states; Equations; Mathematical model; Quantum computing; Quantum dots; Transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667628
  • Filename
    5667628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1636346