Title :
Pre-cycling with higher voltages for endurance improvement of silicon nanocrystal memory device
Author :
Wang, Yong ; Yang, Xiaonan ; Wang, Qin ; Huo, Zongliang ; Zhang, Manhong ; Zhang, Bo ; Liu, Ming
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
Contradiction of threshold voltage shift window and endurance severely restricts the application of silicon nanocrystals (Si-NCs). Pre-cycling with higher program/erase (P/E) voltages greatly improves the endurance performance. Baked at 150°C, decreases of stored charges at programmed states have a similar trend, which proves the optimized method does not bring more traps than normal P/E cycling.
Keywords :
memory architecture; nanostructured materials; endurance improvement; pre-cycling; programmed state; silicon nanocrystal memory device; threshold voltage shift window; Degradation; Logic gates; Nanocrystals; Programming; Stress; Threshold voltage; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667629
