DocumentCode :
163636
Title :
Investigation of Ni(Pt)/Si-cap/SiGe solid phase reaction
Author :
Jian-Chi Zhang ; Yu-Long Jiang ; Bing-Zong Li
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear :
2014
fDate :
18-20 May 2014
Firstpage :
1
Lastpage :
4
Abstract :
Ni(Pt)/Si-cap/SiGe solid phase reaction with various Si cap layer thickness and Ge content has been investigated in this paper. The results suggest that the Si-cap layer needs to be carefully optimized to achieve the lowest sheet resistance (Rs). The thermal stability study shows that Ge atoms out-diffusion results in the strain relaxation and the decrease of Ge content of SiGe layer even after a low temperature post annealing, although the Rs apparently remain constant. After a higher temperature post annealing, the film agglomeration and Ge segregation cause a significant increase in Rs and decrease of compressive strain in SiGe layer.
Keywords :
Ge-Si alloys; annealing; chemical interdiffusion; compressibility; elemental semiconductors; nickel alloys; platinum alloys; segregation; semiconductor-metal boundaries; silicon; thermal stability; thin films; Ni(Pt)-Si-SiGe; cap layer thickness; compressive strain; film agglomeration; higher temperature post annealing; low temperature post annealing; lowest sheet resistance; out-diffusion; segregation; solid phase reaction; strain relaxation; thermal stability; Annealing; Epitaxial growth; Silicon; Silicon germanium; Strain; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2014 International Workshop on
Conference_Location :
Shanghai
Type :
conf
DOI :
10.1109/IWJT.2014.6842063
Filename :
6842063
Link To Document :
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