A Widlar-bandgap based intermediate-frequency voltage-controlled oscillator for GSM/DCS transceiver ICs

Author

Dec, A. ; Suyama, K. ; Kimura, Y. ; Ichinose, T.

Author_Institution

Epoch Microelectron., Inc, White Plains, NY, USA

Volume

1

fYear

2003

Abstract

This paper presents an intermediate-frequency voltage-controlled oscillator using a Widlar-bandgap for stable operation over supply and temperature variations without degrading the phase noise performance. The design is fabricated in a 0.35 /spl mu/m SOI BiCMOS and is packaged in a QFN24 plastic package. The VCO operates at 1 GHz with a tuning range of 250 MHz and achieves a phase noise of -113 dBc/Hz at 400 kHz offset from the carrier. The VCO core and buffer consume 4 mA and 11 mA from a 2.7 V power supply, respectively. The IF-VCO is suitable for GSM/DCS transceiver IC applications.

Keywords

BiCMOS analogue integrated circuits; MMIC oscillators; UHF integrated circuits; UHF oscillators; cellular radio; circuit tuning; digital radio; phase noise; silicon-on-insulator; transceivers; voltage-controlled oscillators; 0.35 micron; 1 GHz; 11 mA; 2.7 V; 4 mA; GSM/DCS transceiver ICs; QFN24 plastic package; SOI BiCMOS; Si; VCO core; Widlar-bandgap based oscillator; intermediate-frequency voltage-controlled oscillator; phase noise; phase noise performance; supply variations; temperature variations; tuning range; BiCMOS integrated circuits; Degradation; Distributed control; GSM; Phase noise; Plastic packaging; Temperature; Transceivers; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1211049

Filename

1211049