High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD

High-performance implant-free In_0.53Ga_0.47As-channel MOSFETs grown on GaAs substrates by Metalorganic Chemical Vapor Deposition (MOCVD) are demonstrated. Atomic-layer-deposited (ALD) Al₂O₃ was used as gate dielectric on top of a δ-doped In_0.53Ga_0.47As/In_0.51Al_0.49As metamorphic heterojunction structures grown on GaAs substrates. A 1-μm gate-length MOSFET with 15nm Al₂O₃ shows a maximum drain current of 590 mA/mm and peak Gm of 501 mS/mm. To the best of our knowledge, these are the highest reported values to date for III-V MOSFETs on GaAs substrates. The maximum gate leakage is 7.2nA/mm at the forward gate bias of 4V and the on resistance is 1491 Ω·μm.