Title :
0.3-µm gate-length metamorphic AlInAs/GaInAs HEMTs on Silicon substrates by MOCVD
Author :
Li, Hai-Ou ; Li, Ming ; Tang, Chak Wah ; Zhong, Zhen Yu ; Lau, Kei May
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Fabrication and performance of high-frequency 0.3-μm gate-length depletion-mode metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMT) grown by Metalorganic Chemical Vapor Deposition (MOCVD) on n-type silicon substrates is reported. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. A maximum trans-conductance up to 739mS/mm was measured. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 72.4 and 77.3GHz, respectively. An input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 6.8 and a voltage gain, gm/go, of 6.9 are observed in the device.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; electron beam lithography; gallium compounds; high electron mobility transistors; indium compounds; photolithography; silicon; AlInAs-GaInAs; MOCVD; Si; depletion-mode metamorphic HEMT; e-beam photolithography technology; frequency 72.4 GHz; frequency 77.3 GHz; gate-drain feedback capacitance; high electron mobility transistors; metalorganic chemical vapor deposition; oscillation frequency; size 0.3 mum; unity current gain; Logic gates; MOCVD; MODFETs; Silicon; Substrates; mHEMTs;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667636
