DocumentCode :
1636605
Title :
Electron emission from thin film ferroelectric cathodes
Author :
Liu, F. ; Fleddermann, C.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
Volume :
2
fYear :
1999
Firstpage :
1305
Abstract :
The purpose of this work is to systematically investigate the emission properties of thin film ferroelectric (FE) cathodes. By using a "sol-gel" method and standard microelectronic technologies, successful thin film cathodes have been made from three different FE materials: PLZT 2/95/5 (0.2 /spl mu/m in thickness), PNZT 4/20/80 (0.8 /spl mu/m), and PLZT 25/10/90 (0.2 /spl mu/m). For each material, three different top electrode strip patterns of width 1.5 /spl mu/m, 3 /spl mu/m, and 10 /spl mu/m were designed and fabricated. Repeatable emission around 10 /spl mu/A/cm/sup 2/ has been detected for PNZT cathodes driven in the pulsed mode. Strong but inconsistent emission up to 20 mA/cm2 has been measured for higher switch voltages. The dependence of emission properties on material, strip widths, switch voltages, and extraction voltages has been recorded and analyzed. Mechanisms of the emission phenomena have also been investigated.
Keywords :
cathodes; electron emission; ferroelectric thin films; lanthanum compounds; lead compounds; niobium compounds; piezoceramics; sol-gel processing; 0.2 mum; 0.8 mum; 1.5 mum; 10 mum; 3 mum; PLZT; PNZT; electron emission; emission phenomena; emission properties; extraction voltages; microelectronic technologies; pulsed mode; repeatable emission; sol-gel method; strip widths; switch voltages; thin film cathodes; thin film ferroelectric cathodes; top electrode strip patterns; Cathodes; Electrodes; Electron emission; Ferroelectric materials; Iron; Microelectronics; Strips; Switches; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
Type :
conf
DOI :
10.1109/PPC.1999.823766
Filename :
823766
Link To Document :
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