Plasma discharge properties of methane-argon and acetylene-argon discharges

Author

Kim, B.K. ; Grotjohn, T.A.

Author_Institution

Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA

fYear

1998

Firstpage

224

Abstract

Summary form only given. The discharge properties of methane-argon and acetylene-argon discharges generated in a microwave ECR plasma reactor are investigated. The discharges are utilized for the deposition of hydrogenated amorphous carbon thin films. The deposition reactor consists of a microwave plasma source with a RF biased substrate located downstream in the processing chamber. The films deposited with the two different gas mixtures have substantially different properties and this investigation is directed at quantifying the discharge composition to better understand the deposition process.

Keywords

argon; gas mixtures; high-frequency discharges; organic compounds; plasma CVD; plasma diagnostics; 0 to -150 V; 1 to 5 mtorr; C; C film deposition; RF biased substrate; acetylene-Ar discharges; deposition process; deposition reactor; discharge composition; discharge generation; discharge properties; gas mixtures; hydrogenated amorphous carbon thin films; methane-Ar discharges; microwave ECR plasma reactor; microwave plasma source; plasma discharge properties; processing chamber; Argon; Chemical elements; Fault location; Plasma chemistry; Plasma confinement; Plasma measurements; Plasma properties; Plasma sources; Plasma temperature; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on

Conference_Location

Raleigh, NC, USA

ISSN

0730-9244

Print_ISBN

0-7803-4792-7

Type

conf

DOI

10.1109/PLASMA.1998.677750

Filename

677750