Growth of diamond films by ECR plasma enhanced chemical vapor deposition

Summary form only given. ECR plasma-assisted chemical vapor deposition (PACVD) is a technique currently receiving much interest because the ECR plasma system offers a more complex parameter space than the conventional PACVD process. These include magnetic confinement of the plasma, independent source control over the dissociation of the reaction gases, independent substrate bias (DC or RF voltage), independent substrate temperature control, down stream plasma operation, and magnetic mirror configuration-which allows for the extraction of specific ion energies from the plasma chamber. Moreover, a unique feature of the ECR plasma is the production of an energetic electron tail, establishing a large sheath potential on the substrate surface for energizing the bombarding ions which enhances the nucleation rate. An ECR system for PACVD of diamond film is designed and setup.