Power-switching applications beyond silicon: The status and future prospects of SiC and GaN devices

Author

Dimitrijev, Sima ; Han, Jinguang ; Haasmann, D. ; Moghadam, H.A. ; Aminbeidokhti, A.

Author_Institution

Queensland Micro- & Nanotechnol. Centre, Griffith Univ., Nathan, QLD, Australia

fYear

2014

fDate

12-14 May 2014

Firstpage

43

Lastpage

46

Abstract

Following a review of the key power-switch requirements and the fundamental limitations of silicon as a material, this paper describes the technical issues and the reasons that motivated the development of commercially available Schottky diodes and MOSFETs in SiC. In the second part, the paper analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and even significant price reduction of power-electronic switches.

Keywords

III-V semiconductors; MOSFET; Schottky diodes; elemental semiconductors; gallium compounds; power semiconductor switches; silicon; silicon compounds; wide band gap semiconductors; GaN; GaN devices; MOSFET; Schottky diodes; Si; SiC; SiC devices; power switching applications; power-electronic switches; price reduction; silicon; Gallium nitride; HEMTs; Logic gates; MOSFET; Schottky diodes; Silicon; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on

Conference_Location

Belgrade

Print_ISBN

978-1-4799-5295-3

Type

conf

DOI

10.1109/MIEL.2014.6842083

Filename

6842083