Simple 1/f noise parameter extraction method for high-voltage MOSFETs

Author

Fellas, Konstantinos ; Mavredakis, N. ; Pflanzl, Walter ; Seebacher, E. ; Bucher, Matthias

Author_Institution

Sch. of Electron. & Comput. Eng., Tech. Univ. of Crete, Chania, Greece

fYear

2014

fDate

12-14 May 2014

Firstpage

89

Lastpage

92

Abstract

A 1/f noise parameter extraction method for high-voltage (HV-)MOSFETs at 3V drain bias is presented in this paper. In this region the overall noise is mostly dominated by the noise originating in the channel. The bias dependence of flicker noise, related to transconductance-to-current ratio, allows for an easy means to determine related noise parameters. Though measured data is limited, parameters related to carrier number fluctuation effect may be found. 50 V N-channel HV-MOSFETs are investigated for long as well as short channel lengths. The parameter extraction method is applied to a recently established 1/f noise model for HV-MOSFETs, showing a good agreement among model and experimental data.

Keywords

1/f noise; MOSFET; flicker noise; semiconductor device models; 1/f noise parameter extraction; bias dependence; carrier number fluctuation; drain bias; flicker noise; high-voltage MOSFET; n-channel HV-MOSFET; noise parameters; short channel lengths; transconductance-to-current ratio; voltage 3 V; voltage 50 V; 1f noise; Fluctuations; MOSFET; Mathematical model; Parameter extraction; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on

Conference_Location

Belgrade

Print_ISBN

978-1-4799-5295-3

Type

conf

DOI

10.1109/MIEL.2014.6842092

Filename

6842092