High-k III–V MOSFETs enabled by atomic layer deposition

The principal obstacle to III-V compound semiconductors rivaling or exceeding the properties of Si electronics has been the lack of high-quality, thermodynamically stable insulators on III-V materials. For more than four decades, the research community has searched for suitable III-V compound semiconductor gate dielectrics or passivation layers. The research on ALD approach is of particular interest, since the Si industry is getting familiar with ALD Hf-based dielectrics and this approach has the potential to become a manufacturable technology.