InGaN/GaN multi-quantum-well nanowires and light emitting

Author

Yin, Yao ; Cao, Ruihua ; Chen, Peng ; Wan, Qing ; Pu, Lin ; Shi, Yi ; Zhang, Rong ; Zheng, Youdou

Author_Institution

Key Lab. of Photonic & Electron. Mater., Nanjing Univ., Nanjing, China

fYear

2010

Firstpage

1362

Lastpage

1364

Abstract

InGaN/GaN multi-quantum-well (MQW) nanowires and accordingly light-emitting-diodes (LEDs) were fabricated on the n-GaN/sapphire substrate with a nano-patterned SiO₂ film as growth mask. The structural characteristics, optical and electrical properties were investigated. the observed results show that a InGaN/GaN MQW nanowire has smooth surface morphologies and triangular cross sectional structure. A strong cathodoluminescence emission peak related to InGaN/GaN MQW is observed located at 461 nm. In addition, InGaN/GaN MQW nanowire LED shows typical p-n junction characteristics with a low turn-on voltage, and its electroluminescence displays purplish.

Keywords

III-V semiconductors; LED displays; cathodoluminescence; gallium compounds; indium compounds; low-power electronics; nanofabrication; nanopatterning; nanowires; sapphire; semiconductor quantum wells; semiconductor thin films; wide band gap semiconductors; InGaN-GaN; LED; MQW nanowire; cathodoluminescence emission peak; electroluminescence display; light emitting diode; low turn-on voltage; multiquantum well nanowire; nanopatterned film; p-n junction characteristic; sapphire substrate; smooth surface morphology; Electroluminescence; Films; Gallium nitride; Light emitting diodes; Nanowires; Quantum well devices; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667645

Filename

5667645