Characterization of semi-insulating (SI) GaAs as photoconductive switch material for high power, UWB microwave applications

Author

Islam, Naz E. ; Schamiloglu, Edl ; Fleddermann, C.B.

Author_Institution

Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA

fYear

1998

Firstpage

228

Abstract

Summary form only given. A Photoconductive Semiconductor Switch (PCSS) based on SI GaAs material and used as a component of a pulse shaping network, has been studied using a 2-3 D semiconductor device and materials simulation code. Simulations include device characteristics at low and very high bias conditions, determination of hold-off voltage, role of traps in the transport mechanism, and the device response mechanism with changes in such parameters as carrier lifetime, trap captures cross-section, etc. Deviations from known characteristics of "lifetime" material were evident and, as expected, results did not display all known characteristics of "relaxation" materials.

Keywords

III-V semiconductors; carrier lifetime; carrier relaxation time; gallium arsenide; microwave devices; photoconducting switches; 2-3 D semiconductor device and materials simulation code; GaAs; GaAs semiconductor; PCSS; bias conditions; carrier lifetime; device characteristics; device response mechanism; equilibrium conditions; high power UWB microwave applications; hold-off voltage; initial conduction phase; lifetime material; mixed mode simulations; photoconductive switch material; pulse shaping network; relaxation materials; relaxation semiconductors; secondary breakdown mechanism; semi-insulating GaAs; transport mechanism; trap capture cross-section; traps; Charge carrier lifetime; Gallium arsenide; Photoconducting devices; Photoconducting materials; Photoconductivity; Pulse shaping methods; Semiconductor devices; Semiconductor materials; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on

Conference_Location

Raleigh, NC, USA

ISSN

0730-9244

Print_ISBN

0-7803-4792-7

Type

conf

DOI

10.1109/PLASMA.1998.677763

Filename

677763