Title :
Investigation of electrical characteristics of multi-gate bulk nMOSFET
Author :
Zbierska, I. ; Militaru, L. ; Calmon, Francis ; Feruglio, S. ; Lu, G.N.
Author_Institution :
INL, Univ. of Lyon, Villeurbanne, France
Abstract :
A multi-gate nMOSFET in bulk CMOS process can be fabricated by integration of polysilicon-filled trenches. We have investigated its characteristics using I-V measurements, C-V split method and both two- and three-level charge pumping techniques. Its tunable-threshold and multi-threshold features were verified. Its surface-channel low-field electron mobility and the Si/SiO2 interface traps were also evaluated. We observed no significant degradation of these characteristics due to integration of polysilicon-filled trenches in the CMOS process.
Keywords :
CMOS integrated circuits; MOSFET; electron mobility; interface states; silicon; silicon compounds; Si-SiO2; bulk CMOS process; charge pumping; interface traps; multigate bulk nMOSFET; polysilicon-filled trenches; surface channel low field electron mobility; Charge measurement; Charge pumps; Logic gates; MOSFET; MOSFET circuits; Silicon; Threshold voltage;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842094
