DocumentCode
1636956
Title
Distortion analysis of MOSFETS for application in MOSFET-C circuits
Author
Schneider, M.C. ; Galup-Montoro, C. ; Acosta, S.M. ; Cunha, A.I.A.
Author_Institution
Dept. of Electr. Eng., Univ. Fed. de Santa Catarina, Florianapolis, Brazil
Volume
1
fYear
1998
Firstpage
33
Abstract
The aim of this paper is to provide some guidelines on the design of MOS V-I converters. An explicit formula for the harmonic distortion based on an analytic model of the MOSFET has been derived for any inversion level. Experimental results for the distortion in the MOSFET V-I characteristics as well as biasing and tuning strategies applied to MOSFET-C filters are presented
Keywords
MOS analogue integrated circuits; MOSFET; active filters; circuit tuning; convertors; harmonic distortion; MOSFET-C filters; MOSFETS; V-I characteristics; V-I converters; analytic model; biasing strategies; distortion analysis; harmonic distortion; inversion level; tuning strategies; Active filters; Guidelines; Harmonic analysis; Harmonic distortion; Low voltage; MOSFET circuits; Microelectronics; Resistors; Tunable circuits and devices; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-4455-3
Type
conf
DOI
10.1109/ISCAS.1998.704165
Filename
704165
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