Title :
Distortion analysis of MOSFETS for application in MOSFET-C circuits
Author :
Schneider, M.C. ; Galup-Montoro, C. ; Acosta, S.M. ; Cunha, A.I.A.
Author_Institution :
Dept. of Electr. Eng., Univ. Fed. de Santa Catarina, Florianapolis, Brazil
Abstract :
The aim of this paper is to provide some guidelines on the design of MOS V-I converters. An explicit formula for the harmonic distortion based on an analytic model of the MOSFET has been derived for any inversion level. Experimental results for the distortion in the MOSFET V-I characteristics as well as biasing and tuning strategies applied to MOSFET-C filters are presented
Keywords :
MOS analogue integrated circuits; MOSFET; active filters; circuit tuning; convertors; harmonic distortion; MOSFET-C filters; MOSFETS; V-I characteristics; V-I converters; analytic model; biasing strategies; distortion analysis; harmonic distortion; inversion level; tuning strategies; Active filters; Guidelines; Harmonic analysis; Harmonic distortion; Low voltage; MOSFET circuits; Microelectronics; Resistors; Tunable circuits and devices; Writing;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.704165
