Title :
Bonding and gap states at GaAs- oxide interfaces
Author_Institution :
Eng. Dept, Cambridge Univ., Cambridge, UK
Abstract :
The nature of bonding and possible causes of Fermi level pinning at high mobility, high K GaAs:HfO2 FET interfaces is described.
Keywords :
Fermi level; III-V semiconductors; bonding processes; field effect transistors; gallium arsenide; hafnium compounds; Fermi level pinning; GaAs-HfO2; GaAs-oxide interface; HfO2 FET; bonding; gap state; high K GaAs; Atomic layer deposition; Gallium; Gallium arsenide; Logic gates; MOSFETs; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667649
