• DocumentCode
    1637219
  • Title

    AlGaN/GaN dual gate MOS HFET for power device applications

  • Author

    Gong, Rumin ; Wang, Jinyan ; Liu, Shenghou ; Dong, Zhihua ; Wen, Cheng P. ; Yu, Min ; Cai, Yong ; Zhang, Baoshun

  • Author_Institution
    Insititute of Microelectron., Peking Univ., Beijing, China
  • fYear
    2010
  • Firstpage
    1353
  • Lastpage
    1355
  • Abstract
    Dual gate AlGaN/GaN MOS HFET with Al2O3 as gate oxide layer was fabricated. In comparison with normal dual gate Schottky HFET, dual gate MOS HFET exhibits much lower gate leakage current, larger transconductance and output current. Besides, the dual gate MOS HFET shows excellent breakdown characteristic.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; power MOSFET; Al2O3; AlGaN-GaN; breakdown characteristic; dual gate MOS HFET; gate leakage current; gate oxide layer; output current; power device application; transconductance; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage current; Logic gates; MODFETs; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667654
  • Filename
    5667654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1637219