Title :
AlGaN/GaN dual gate MOS HFET for power device applications
Author :
Gong, Rumin ; Wang, Jinyan ; Liu, Shenghou ; Dong, Zhihua ; Wen, Cheng P. ; Yu, Min ; Cai, Yong ; Zhang, Baoshun
Author_Institution :
Insititute of Microelectron., Peking Univ., Beijing, China
Abstract :
Dual gate AlGaN/GaN MOS HFET with Al2O3 as gate oxide layer was fabricated. In comparison with normal dual gate Schottky HFET, dual gate MOS HFET exhibits much lower gate leakage current, larger transconductance and output current. Besides, the dual gate MOS HFET shows excellent breakdown characteristic.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power MOSFET; Al2O3; AlGaN-GaN; breakdown characteristic; dual gate MOS HFET; gate leakage current; gate oxide layer; output current; power device application; transconductance; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage current; Logic gates; MODFETs; Transconductance;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667654
