A 0.9V 66MHz access, 0.13um 8M(256K×32) local SONOS embedded flash EEPROM

Author

Seo, M.K. ; Sim, S.H. ; Sim, Y.H. ; On, M.H. ; Kim, S.W. ; Cho, I.W. ; Lee, H.S. ; Kim, G.H. ; Kim, M.G.

Author_Institution

Syst. LSI Div., Samsung Electron. Co. Ltd, Yongin, South Korea

fYear

2004

Firstpage

68

Lastpage

71

Abstract

In 0.13 μm CMOS logic compatible process, we implemented 256K×32bit(8Mb) SONOS embedded flash EEPROM using ATD-assisted Current Sense Amplifier (AACSA) for 0.9V(0.7V∼1.4V) low V_CC application. Read operation is performed at a high frequency of 66MHz and shows a low current of typically 5mA at 66MHz operating frequency. Program operation is performed for common source array with wide I/Os(X32) by using Data-dependent Source Bias Control Scheme (DDSBCS). This novel SONOS embedded Flash EEPROM core has the cell size of 0.276um² and the program and erase time of 20us and 20ms respectively.

Keywords

CMOS logic circuits; CMOS memory circuits; flash memories; 0.13 micron; 0.9 V; 66 MHz; CMOS logic compatible process; Data-dependent Source Bias Control Scheme; local SONOS embedded flash EEPROM; Application specific integrated circuits; CMOS logic circuits; CMOS process; Diodes; EPROM; Frequency; Large scale integration; SONOS devices; System-on-a-chip; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8287-0

Type

conf

DOI

10.1109/VLSIC.2004.1346505

Filename

1346505