Self-boosted charge injection for 90-nm-node 4-Gb multilevel AG-AND flash memories programmable at 16 MB/s

Author

Kurata, H. ; Otsuga, K. ; Sasago, Y. ; Arigane, T. ; Kawamura, T. ; Kobayashi, T. ; Ikeda, Y. ; Sat, A. ; Kozakai, K. ; Noda, S. ; Shimizu, M. ; Tsuchiya, O. ; Furusawa, K.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2004

Firstpage

72

Lastpage

73

Abstract

This paper presents a high-speed multilevel programming scheme for 90-nm node AG-AND flash memories. Source-side hot-electron injection programming with self-boosted charge, accumulated in inversion-layer local bit-lines under AGs, reduces the dispersal of programming characteristics and also reduces the time overhead of pre-charging the bit-lines. With this self-boosted charge injection scheme, programming at a fast 16 MB/s is obtainable in 4-Gb flash memory with an actual cell size of 2F²/bit.

Keywords

CMOS integrated circuits; charge injection; flash memories; hot carriers; 16 MB/s; 4 Gbit; 90 nm; 90-nm-node 4-Gb multilevel AG-AND flash memories; high-speed multilevel programming scheme; inversion-layer local bit-lines; self-boosted charge; self-boosted charge injection; source-side hot-electron injection programming; Committee on Communications and Information Policy; Degradation; Digital cameras; Electrons; Flash memory; Flash memory cells; Laboratories; Threshold voltage; Throughput; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8287-0

Type

conf

DOI

10.1109/VLSIC.2004.1346506

Filename

1346506