Title :
4H-SiC MESFET with a novel MOS gate controlled spacer layer structure
Author :
Song, Kun ; Chai, Chang-Chun ; Jia, Hu-Jun ; Yang, Yin-tang
Author_Institution :
Dept. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
A novel structure of 4H-SiC MESFETs is proposed which focuses on surface trap suppression. A MOS gate controlled spacer layer is shown to improve both DC and AC characteristics due to suppressed surface effect and decreased gate capacitance. A very high power density of 6.1 W/mm is obtained at S band operation. Compare with the well recognized buried gate structure, there is a significant improvement in the power density of about 18%. Also, a 12% and a 15% improvement in fT and fmax are obtained in AC simulation, respectively.
Keywords :
MIS devices; Schottky gate field effect transistors; silicon compounds; 4H-SiC MESFET; AC characteristics; AC simulation; DC characteristics; MOS gate controlled spacer layer structure; SiC; gate capacitance; surface effect suppression; surface trap suppression; Capacitance; Doping; Logic gates; MESFETs; Materials; Silicon carbide; Transient analysis;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667659
