DocumentCode
1637380
Title
A new approach to field-plate junction termination modeling
Author
Krizaj, D. ; Skolic, S. ; Amon, Slavko
Author_Institution
Fac. of Electr. & Comput. Eng., Ljubljana Univ., Yugoslavia
fYear
1991
Firstpage
91
Abstract
Breakdown enhancement of plane junctions equipped with a field plate is investigated. Various possibilities for numerical modeling are discussed and simulation results are given, revealing an interplay between pn junction and field plate edge breakdown properties. The possibility of an additional breakdown voltage increase is found by adding a floating metal plate after the field plate edge
Keywords
electric breakdown of solids; p-n junctions; semiconductor device models; breakdown enhancement; breakdown voltage; field plate edge breakdown; field-plate junction termination modeling; floating metal plate; numerical modeling; plane junctions; semiconductor device model; simulation; Convergence of numerical methods; Doping profiles; Electric breakdown; High performance computing; Laplace equations; Numerical models; Performance analysis; Poisson equations; Semiconductor device breakdown; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location
LJubljana
Print_ISBN
0-87942-655-1
Type
conf
DOI
10.1109/MELCON.1991.161786
Filename
161786
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