Title :
An ultra low noise amplifier at X band
Author :
Manohar, S. ; Kirty, V.S.R.
Author_Institution :
Astra Microwave Products Ltd., Hyderabad, India
Abstract :
The design and development of a low noise amplifier that exhibits sub dB noise figures at X band, using a commercially available pHEMT process is presented here. Novelties in our design include the use of stabilizing networks that don´t employ resistors and the use of transmission line based inductors that provide a higher Q alternative to spirals. These techniques serve to minimize the lowest achievable noise figure while allowing unconditional stability, a pre-requisite in commercial, monolithic LNAs. The designed low noise amplifier works from 9 to 11 GHz with roughly 30 decibels of gain over the band and sub decibel noise figures.
Keywords :
high electron mobility transistors; inductors; low noise amplifiers; microwave amplifiers; transmission lines; X band; frequency 9 GHz to 11 GHz; gain 30 dB; inductors; low noise amplifier; monolithic LNA; pHEMT process; stabilizing networks; sub decibel noise figures; transmission line; unconditional stability; Gain; Low-noise amplifiers; Microwave amplifiers; Microwave circuits; Noise; Noise figure; Impedance matching; Low noise amplifiers; Resistive loading;
Conference_Titel :
Microwave and RF Conference, 2013 IEEE MTT-S International
Conference_Location :
New Delhi
DOI :
10.1109/IMaRC.2013.6777707
