Title :
Moderate inversion: Analog and RF benchmarking with the EKV3 compact model
Author :
Papathanasiou, Kostas ; Makris, Nikos ; Antonopoulos, Antonios ; Bucher, Matthias
Author_Institution :
Sch. of Electron. & Comput. Eng., Tech. Univ. of Crete, Chania, Greece
Abstract :
In this paper the validity of the EKV3 advanced compact MOSFET model is verified with DC and RF measurements of a 90 nm CMOS low-power (LP) process. The model is capable of describing the edge conduction effect, mainly occurring in moderate levels of channel inversion. Non-linearities are extracted from DC measurements and the robustness of the model is also proven, in terms of RF figures of merit (FoM) suitable for RFIC design, for both n- and p-type MOS devices.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; radiofrequency integrated circuits; semiconductor device models; CMOS low-power process; DC measurement; EKV3 advanced compact MOSFET model; RF benchmarking; RF figures of merit; RFIC design; channel inversion; edge conduction effect; radiofrequency integrated circuits; size 90 nm; CMOS integrated circuits; Integrated circuit modeling; Logic gates; MOSFET; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842122
