Moderate inversion: Analog and RF benchmarking with the EKV3 compact model

Author

Papathanasiou, Kostas ; Makris, Nikos ; Antonopoulos, Antonios ; Bucher, Matthias

Author_Institution

Sch. of Electron. & Comput. Eng., Tech. Univ. of Crete, Chania, Greece

fYear

2014

fDate

12-14 May 2014

Firstpage

205

Lastpage

208

Abstract

In this paper the validity of the EKV3 advanced compact MOSFET model is verified with DC and RF measurements of a 90 nm CMOS low-power (LP) process. The model is capable of describing the edge conduction effect, mainly occurring in moderate levels of channel inversion. Non-linearities are extracted from DC measurements and the robustness of the model is also proven, in terms of RF figures of merit (FoM) suitable for RFIC design, for both n- and p-type MOS devices.

Keywords

CMOS integrated circuits; MOSFET; low-power electronics; radiofrequency integrated circuits; semiconductor device models; CMOS low-power process; DC measurement; EKV3 advanced compact MOSFET model; RF benchmarking; RF figures of merit; RFIC design; channel inversion; edge conduction effect; radiofrequency integrated circuits; size 90 nm; CMOS integrated circuits; Integrated circuit modeling; Logic gates; MOSFET; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on

Conference_Location

Belgrade

Print_ISBN

978-1-4799-5295-3

Type

conf

DOI

10.1109/MIEL.2014.6842122

Filename

6842122