DocumentCode :
1637442
Title :
A ultra-fast load regulation capacitor-free LDO with advanced capacitive-coupling feedforward compensation
Author :
Zhiming, Hu ; Ze-Kun, Zhou ; Yue, Chen ; Bo, Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2010
Firstpage :
482
Lastpage :
484
Abstract :
A low-power, capacitor-free low-dropout regulator (LDO) with Pseudo-Input stage feedforward compensation (PISFFC) is proposed in this paper. This novel FFC technique, employing the method of capacitive-coupling to provide large dynamic current for driving power transistor, is highly integrated, widely applicable and can provide ultra-fast load transient response. Compared to conventional slew rate enhancement(SRE) technique, the proposed technique is power-saving and can work at lower supply voltage. Moreover, with an additional left-half plane (LHP) zero generated by PISFFC, frequency compensation can be simpler and the unity-gain-bandwidth (UGB) can be wider. A 50-mA LDO with a 0.2-nF on-chip capacitor employed the proposed PISFFC has been implemented and simulated in a 0.13μm CMOS process. Simulation results show that the LDO got low quiescent current(17μA), low-voltage operation ability(1.5V) and greatly improved transient response(output dips less than 170-mV in 0.1μs Switching time).
Keywords :
load regulation; power transistors; transient response; CMOS process; additional left-half plane zero; advanced capacitive coupling feedforward compensation; capacitor-free low-dropout regulator; dynamic current; frequency compensation; low quiescent current; low voltage operation; on-chip capacitor; power saving; power transistor; slew rate enhancement; ultra fast load transient response; unity gain bandwidth; Capacitors; Mathematical model; Power transistors; Simulation; Strontium; Transient analysis; Transient response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667662
Filename :
5667662
Link To Document :
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