Title :
Drain current modelling in silicon MOSFETs
Author :
Lakhlef, A. ; Benfdila, A.
Author_Institution :
Microelectron. & Nanotechnol. Res. Group GRMNT, Univ. M. Mammeri, Tizi-Ouzou, Algeria
Abstract :
The present paper deals with the modeling of silicon MOSFET in the variety of channel range from submicron to nanoMOSFET aiming the study of the degradation and aging of MOSFET transistor used in VLSI Integrated circuits. The proposed model can be used for better understanding of the device reliability in the operating regions of interest. Moreover, it can be seen as a characterization tool for extracting more information on the interface Si-SiO2, the channel and the oxide itself. The model is expressed as current versus voltage in the possible full range of gate voltage and meant to comply with the unified current model.
Keywords :
MOSFET; ageing; elemental semiconductors; semiconductor device models; semiconductor device reliability; silicon; silicon compounds; MOSFET transistor aging; MOSFET transistor degradation; Si-SiO2; VLSI integrated circuits; device reliability; drain current modelling; gate voltage; nanoMOSFET; silicon MOSFETs; submicronMOSFET; unified current model; Data models; Integrated circuit modeling; Logic gates; MOSFET; Microelectronics; Reliability; Semiconductor device modeling; Carrier Mobility; Current Model; I-V Characteristic; MOSFET; Operating Regimes;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842124
